advanced power n-channel enhancement mode electronics corp. power mosfet 100% avalanche test bv dss 600v fast switching characteristics r ds(on) 5 simple drive requirement i d 2a description absolute maximum ratings symbol units v ds drain-source voltage v v gs gate-source voltage v i d @t c =25 continuous drain current, v gs @ 10v a i dm pulsed drain current 1 a p d @t c =25 total power dissipation w w/ e as single pulse avalanche energy 2 mj i ar avalanche current a t stg t j operating junction temperature range thermal data symbol value units rthj-c maximum thermal resistance, junction-case 6.25 /w rthj-a maximum thermal resistance, junction-ambient 62 /w data & specifications subject to change without notice rohs-compliant product 201019072-1/4 ap4002s/p -55 to 150 parameter 20 parameter rating 600 30 storage temperature range -55 to 150 8 20 linear derating factor 0.16 2 2 g d s g d s to-263(s) g d s to-220(p) advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the to-263 package is widely preferred for commercial-industrial surface mount applications and suited for power applications.the through-hole version (AP4002P) are available for low-profile applications.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 600 - - v r ds(on) static drain-source on-resistance v gs =10v, i d =1.0a - - 5 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =2.0a - 1.5 - s i dss drain-source leakage current (t j =25 o c) v ds =600v, v gs =0v - - 100 ua i gss gate-source leakage v gs =30v - - 1 ua q g total gate charge 3 i d =2a - 12 19 nc q gs gate-source charge v ds =480v - 2 - nc q gd gate-drain ("miller") charge v gs =10v - 5.5 - nc t d(on) turn-on delay time 3 v dd =200v - 10 - ns t r rise time i d =1a - 12 - ns t d(off) turn-off delay time r g =50 ? v gs =10v - 52 - ns t f fall time r d =200 -19- ns c iss input capacitance v gs =0v - 375 600 pf c oss output capacitance v ds =10v - 170 - pf c rss reverse transfer capacitance f=1.0mhz - 45 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 3 i s =2a, v gs =0v - - 1.5 v t rr reverse recovery time 3 i s =2a, v gs =0 v , - 340 - ns q rr reverse recovery charge di/dt=100a/s - 2.2 - c notes: 1.pulse width limited by max. junction temperature. 2.starting t j =25 o c , v dd =50v , l=10mh , r g =25 3.pulse test 2/4 ap4002s/p this product is an electrostatic sensitive, please handle with caution. this product has been qualified for consumer market. applications or uses as criterial component in life support device or system are not authorized.
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3/4 ap4002s/p 0 0.4 0.8 1.2 1.6 2 2.4 2.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =1.0a v g =10v 0.8 0.9 1 1.1 1.2 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss (v) 0 0.4 0.8 1.2 1.6 2 0246810 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c v g =4.5v 10v 7.0v 6.0v 5.0v 0 0.4 0.8 1.2 1.6 2 0102030 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c v g =4.0v 10v 7.0v 6.0v 5.0v 0 2 4 6 8 10 0.1 0.3 0.5 0.7 0.9 1.1 1.3 v sd , source-to-drain voltage (v) i s (a) t j = 25 o c t j = 150 o c 0.4 0.6 0.8 1 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v)
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4/4 ap4002s/p 0 0 1 10 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge 1 100 10000 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0 2 4 6 8 10 12 14 0 4 8 12 16 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =2a v ds =480v
package outline : to-263 millimeters min nom max a 4.25 4.75 5.20 a1 0.00 0.15 0.30 a2 2.20 2.45 2.70 b 0.70 0.90 1.10 b1 1.07 1.27 1.47 c 0.30 0.45 0.60 c1 1.15 1.30 1.45 d 8.30 8.90 9.40 e 9.70 10.10 10.50 e 2.04 2.54 3.04 l2 ----- 1.50 ----- l3 4.50 4.90 5.30 l4 ----- 1.50 ---- 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-263 symbols advanced power electronics corp. package code part numbe r e b b1 e d l2 l3 c1 a a1 l4 c ywwsss a2 y last digit of the year ww week sss sequence package code part numbe r 4002s ywwsss logo e b b1 e d l2 l3 c1 a a1 l4 c a2 date code (ywwsss) y last digit of the year ww week sss sequence
package outline : to-220 millimeters min nom max a 4.25 4.48 4.70 b 0.65 0.80 0.90 b1 1.15 1.38 1.60 c 0.40 0.50 0.60 c1 1.00 1.20 1.40 e 9.70 10.00 10.40 e1 --- --- 11.50 e ---- 2.54 ---- l 12.70 13.60 14.50 l1 2.60 2.80 3.00 l2 1.00 1.40 1.80 l3 2.6 3.10 3.6 l4 14.70 15.50 16 l5 6.30 6.50 6.70
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